Semiconductor power module

ABSTRACT

Provided is a semiconductor power module including: a first electrode on which a plurality of element arrays each including a plurality of semiconductor elements arranged in an X direction, are arranged in a Y direction; a first main wiring connected to the respective element arrays mounted on the first electrode; a first sensor mounted on a first detection target element as one of the semiconductor elements, which is least influenced by synthetic inductance of the first main wiring among the semiconductor elements of the plurality of element arrays mounted on the first electrode; a first control terminal disposed on the first electrode; and a control board configured to control a current flowing through the first detection target element based on a detection result of the first sensor obtained via the first control terminal.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a National Stage of International Application No.PCT/JP2017/020124 filed May 30, 2017.

TECHNICAL FIELD

The present invention relates to a semiconductor power module configuredby a plurality of element arrays each including a plurality ofsemiconductor elements.

BACKGROUND ART

Hitherto, there has been proposed a temperature detecting deviceconfigured to detect a temperature of a semiconductor module configuredby a plurality of semiconductor elements (see, for example, PatentLiterature 1). The temperature detecting device described in PatentLiterature 1 includes temperature detecting diodes provided inrespective semiconductor elements and connected to each other inparallel, and a temperature detecting circuit that is connected to theparallel-connected temperature detecting diodes and configured to detecta temperature of a semiconductor module based on output voltage from theparallel-connected temperature detecting diodes.

CITATION LIST Patent Literature

[PTL 1] JP 3194353 B2

SUMMARY OF INVENTION Technical Problem

Semiconductor power modules have a configuration in which a temperaturesensor and a current sensor are mounted on semiconductor elements toprevent thermal breakdown and overcurrent breakdown of the semiconductorelements. Further, in order to achieve a large-capacity semiconductorpower module, semiconductor elements may be formed of a wide bandgapsemiconductor, such as silicon carbide or gallium nitride.

However, a wafer substrate made of the wide bandgap semiconductorinvolves large defect density, and hence, production yield ofsemiconductor elements is reduced. As a result, upsizing of therespective semiconductor elements becomes difficult Therefore, thesemiconductor power module is required to be configured by a pluralityof semiconductor elements of a smaller size, which are connected inparallel.

Regarding the related-art device of Patent Literature 1, the device isconfigured to detect the temperature based on output voltage from theplurality of temperature detecting diodes being connected in paralleland hence, when three temperature detecting diodes are connected inparallel, for example, a temperature detection error becomes 14° C. thatis too large a temperature detection error. Therefore, an excessivemargin is required for an allowable temperature of the semiconductorpower module. Consequently, a power conversion device having mountedthereon the semiconductor power module cannot easily achieve highoutput.

Further, in the related-art device of Patent Literature 1, it isrequired to mount the temperature detecting diode to all thesemiconductor elements that form the semiconductor module, leading to anincrease in manufacturing cost. It is also required to electricallyconnect the temperature detecting diodes to the temperature detectingcircuit. This configuration requires a larger space in which to installconnection wirings and therefore, a power conversion device havingmounted thereon the semiconductor power module is enlarged.

The present invention has been made to solve the above-mentionedproblems, and it is therefore an object of the present invention toachieve a semiconductor power module that can contribute to realizationof a high-output and compact power conversion device.

Solution to Problem

According to one embodiment of the present invention, there is provideda semiconductor power module including: a first electrode, on which aplurality of element arrays each including a plurality of semiconductorelements arranged in an X direction, are arranged in a Y directionperpendicular to the X direction; a first main wiring connected to therespective element arrays mounted on the first electrode; a first sensormounted on a first detection target element as one of the semiconductorelements, which is least influenced by synthetic inductance of the firstmain wiring among the semiconductor elements of the plurality of elementarrays mounted on the first electrode; a first control terminal disposedon the first electrode; and a control board connected to the firstsensor via the first control terminal, and configured to control acurrent flowing through the first detection target element based on adetection result of the first sensor obtained via the first controlterminal.

Advantageous Effects of Invention

According to the present invention, the semiconductor power module,which can contribute to realization of the high-output and compact powerconversion device, can be provided.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a perspective view of a semiconductor power module accordingto a first embodiment of the present invention.

FIG. 2 is a top view of FIG. 1.

FIG. 3 is a sectional view taken along the line I-I of FIG. 2.

FIG. 4 is a top view of a semiconductor power module according to asecond embodiment of the present invention.

FIG. 5 is a sectional view taken along the line II-II of FIG. 4.

FIG. 6 is a top view of a semiconductor power module according to athird embodiment of the present invention.

FIG. 7 is a sectional view taken along the line III-III of FIG. 6.

FIG. 8 is a top view of a semiconductor power module according to afourth embodiment of the present invention.

FIG. 9 is a sectional view taken along the line IV-IV of FIG. 8.

FIG. 10 is a top view of a semiconductor power module according to afifth embodiment of the present invention.

FIG. 11 is a sectional view taken along the line V-V of FIG. 10.

FIG. 12 is a bottom view of a semiconductor power module according to asixth embodiment of the present invention.

FIG. 13 is a sectional view taken along the line VI-VI of FIG. 12.

FIG. 14 is a circuit diagram for illustrating an inverter as an exampleof a power conversion device to which the semiconductor power moduleaccording to any one of the first to sixth embodiments of the presentinvention is applied.

DESCRIPTION OF EMBODIMENTS

Now, a semiconductor power module according to exemplary embodiments ofthe present invention is described referring to the accompanyingdrawings. In the illustration of the drawings, the same components orcorresponding components are denoted by the same reference symbols, andthe overlapping description thereof is herein omitted. Further, thepresent invention is applied to a power conversion device that is to bemounted to, for example, a plug-in hybrid vehicle and an electricvehicle.

First, a description is given of the power conversion device to whichthe present invention is applied. The power conversion device includes aswitching circuit for power conversion. Specific examples of the powerconversion device include a motor driving inverter mounted on anelectrically powered vehicle, a step-down converter used to convert highvoltage to low voltage, and an electric power component such as acharger connected to an external power supply unit to thereby charge anon-vehicle battery.

Referring to FIG. 14, a description is given below of the inverter asone example of the power conversion device. FIG. 14 is a circuit diagramfor illustrating the inverter as one example of the power conversiondevice to which a semiconductor power module according to any one offirst to sixth embodiments of the present invention is applied.

The inverter of FIG. 14 is configured by semiconductor power modules 301to 306, and is connected, on its input side, to a DC power supply andconnected, on its output side, to a motor having a U-phase winding, aV-phase winding, and a W-phase winding, for example.

The semiconductor power modules 301 to 306 include switching elements Q1to Q6, respectively. The switching elements Q1, Q3, and Q5 on an upperarm side are connected to a positive side (P side) of the DC powersupply, and the switching elements Q2, Q4, and Q6 on a lower arm sideare connected to a negative side (N side) of the DC power supply.

The switching elements Q1 and Q2 are provided for a U phase, theswitching elements Q3 and Q4 are provided for a V phase, and theswitching elements Q5 and Q6 are provided for a W phase.

The respective semiconductor elements mounted on the semiconductor powermodules 301 to 306 are, for example, MOS-FETs, IGBTs, or diodes. As awafer substrate from which to produce the semiconductor elements, widebandgap semiconductors as well as silicon is used.

The motor driving inverter is required to have a larger capacity alongwith motorization of vehicles, for example. In order to achieve theinverter of a large capacity, it is conceivable that the wide bandgapsemiconductor is used for the wafer substrate and in addition, the sizeof each semiconductor element is increased. In this case, however, thewafer substrate involves large defect density and hence, productionyield of the semiconductor elements is reduced, leading to a highmanufacturing cost of the inverter. To address this, the semiconductorelements in each semiconductor power module of the inverter areconfigured so that a plurality of semiconductor elements having asmaller size are connected in parallel.

First Embodiment

Next, referring to FIG. 1 to FIG. 3, a semiconductor power module of thefirst embodiment is described. FIG. 1 is a perspective view of thesemiconductor power module according to the first embodiment of thepresent invention. FIG. 2 is a top view of FIG. 1. FIG. 3 is a sectionalview taken along the line I-I of FIG. 2. In FIG. 1, a cooler 9 is notillustrated. Further, main wirings described later in the respectiveembodiments are configured by, for example, copper-made bus bars.

The semiconductor power module of the first embodiment corresponds tothe respective semiconductor power modules 301 to 306 of FIG. 14. Inother words, the inverter circuit of FIG. 14 can be achieved with use ofsix semiconductor power modules configured as illustrated in FIG. 1 toFIG. 3.

The semiconductor power module of the first embodiment includes acontrol terminal 1 a, a plurality of semiconductor elements 2, a sensor3 a (first sensor), a main wiring 4 (first main wiring), a main wiring5, an electrode 6 a (first electrode), an insulating substrate 7, a heatsink 8, a cooler 9, and a control board (not shown).

On the electrode 6 a to be disposed on the insulating substrate 7, aplurality of element arrays are mounted, which include the plurality ofsemiconductor elements 2 arranged at regular pitches in an X direction.The element arrays are arranged at regular pitches in a Y directionperpendicular to the X direction. More specifically, the plurality ofsemiconductor elements 2 are soldered to the electrode 6 a that is, forexample, a copper pattern. The copper pattern is insulated by theinsulating substrate 7. In the first embodiment, three element arrayseach including three semiconductor elements 2 are arranged by way ofexample.

The insulating substrate 7 is mounted, via the heat sink 8, on thecooler 9 used to cool the plurality of semiconductor elements 2. As acooling system for the cooler 9, there is give, for example, awater-cooling system or an air-cooling system.

The sensor 3 a is mounted on a corresponding one (first detection targetelement) of the semiconductor elements of the plurality of elementarrays mounted on the electrode 6 a, that is, the first detection targetelement, which is least influenced by synthetic inductance of the mainwiring 4 among those elements. In the first embodiment, thesemiconductor element 2 to which the sensor 3 a is mounted is referredto as “semiconductor element 2 a”, the element array including thesemiconductor element 2 a is referred to as “element array A”, and othersemiconductor elements 2 in the element array A are referred to as“semiconductor element 2 b” and “semiconductor element 2 c”.

The main wiring 4 is connected to the respective element arrays mountedon the electrode 6 a. More specifically, the main wiring 4 is bonded tosource pads of the semiconductor elements 2 of the respective elementarrays. Control source pads and gate pads of the semiconductor elements2 are connected to a control terminal (not shown) via an Al wire, forexample.

The main wiring 4 has linear portions 41 (first linear portions), linearportions 42 (second linear portions), and connection portions 43. Thelinear portions 41 extend in the X direction, and are connected to therespective element arrays mounted on the electrode 6 a. The linearportions 42 extend, in the X direction, oppositely to the linearportions 41. The connection portions 43 are each formed to connect oneend of the respective linear portions 41 and one end of the respectivelinear portions 42. In the main wiring 4, another ends of the linearportions 42 on the respective element arrays are connected to each otherby a connection portion 44 that extends in the Y direction. One end ofthe connection portion 44 on the element array A side is connected to anend portion 45 extending in a Z direction perpendicular to the Xdirection and the Y direction. The main wiring 5 is connected to theelectrode 6 a. The main wiring 5 extends, in the Z direction, oppositelyto the end portion 45 of the main wiring 4.

The control terminal 1 a is disposed on the electrode 6 a at an outerposition in the X direction than the plurality of element arrays mountedon the electrode 6 a. More specifically, the control terminal 1 aextends in the Z direction, and is disposed on the element array A sideof the electrode 6 a so as to sandwich the element array A with theopposing main wiring 5.

The end portion 45 of the main wiring 4 and an end portion of the mainwiring 5 are connected to an electronic device such as a capacitor (PNside), a motor (UVW side), and a semiconductor power module. Referringback to FIG. 14, a description is given below of where the end portion45 of the main wiring 4 and the end portion of the main wiring 5 are tobe connected to, byway of example.

That is, the end portions of the main wirings 5 for the semiconductorpower modules 301, 303, and 305 on the upper arm side are all connectedto the P side. The end portions 45 of the main wirings 4 for thesemiconductor power modules 301, 303, and 305 on the upper arm side areconnected to the electrodes 6 a of the semiconductor power modules 302,304, and 306 on the lower arm side, respectively.

The end portions 45 of the main wirings 4 for the semiconductor powermodules 301, 303, and 305 on the upper arm side are connected to the Uphase, the V phase, and the W phase of the motor, respectively. The endportions of the main wirings 5 for the semiconductor power modules 302,304, and 306 on the lower arm side are all connected to the N side.

The control board is connected to the sensor 3 a via the controlterminal 1 a, and is configured to control a current to be supplied tothe semiconductor element 2 a on which the sensor 3 a is mounted, basedon a detection result of the sensor 3 a obtained via the controlterminal 1 a. The sensor 3 a is, for example, a temperature sensor or acurrent sensor as described later.

Next, the synthetic inductance of the main wiring 4 is described. In thesemiconductor element 2 connected to a portion having small syntheticinductance, of the main wiring 4, its source potential changes with nodelay as compared with the semiconductor element 2 connected to aportion having large synthetic inductance, of the main wiring 4 andhence, a large amount of current flows therethrough. In general,synthetic inductance of a wiring is defined by a difference between selfinductance derived from a wiring length and mutual inductance derivedfrom the effect of a magnetic field caused by wirings close thereto.

At the semiconductor element 2 a of the element array A out of the threeelement arrays, the wiring length from the end portion 45 of the mainwiring 4 is shortest, and hence the self-inductance of the main wiring 4is small. Assuming that the plurality of semiconductor elements 2 areuniformly influenced by the mutual inductance, it is thought that alarge amount of current flows in the semiconductor element 2 a locatedat a position with small self inductance, i.e., small syntheticinductance. This is because in the semiconductor element 2 a connectedto a portion having small synthetic inductance, of the main wiring 4,its source potential changes with no delay as compared with thesemiconductor element 2 c connected to a portion having large syntheticinductance, of the main wiring 4, and a desired voltage can be appliedbetween a gate and a source and hence, a large amount of current flowstherethrough.

As understood from the description above, the semiconductor element 2 ais least influenced by the synthetic inductance of the main wiring 4among the semiconductor elements 2 and hence, the largest amount ofcurrent flows therethrough. In other words, the wiring length of themain wiring 4 from the semiconductor element 2 a to the end portion 45is shortest among those from the semiconductor elements of the threeelement arrays and hence, the semiconductor element 2 a is leastinfluenced by the synthetic inductance of the main wiring 4.Consequently, the semiconductor element 2 a suffers from the largestconduction loss, and thus is most liable to undergo thermal breakdown.

To address this, the following configuration is adopted in the firstembodiment. That is, a temperature sensor is mounted as the sensor 3 aon the semiconductor element 2 a, and then connected to the controlboard via the control terminal 1 a. The control board is configured tocut off or reduce a current to be supplied to the semiconductor element2 a before a detection value of the temperature sensor exceeds a presetthreshold value. This configuration prevents thermal breakdown of thesemiconductor element 2 a.

Further, in the semiconductor power module, when a control signal forcontrolling the respective semiconductor elements 2 contains noise sothat a large amount of current flows between a drain and a source,thermal breakdown proceeds in the semiconductor element 2 a throughwhich the largest amount of current flows.

To address this, the following configuration is adopted in the firstembodiment. That is, a current sensor is mounted as the sensor 3 a onthe semiconductor element 2 a, and then connected to the control boardvia the control terminal 1 a. The control board is configured to cut offor reduce a current to be supplied to the semiconductor element 2 abefore a detection value of the current sensor exceeds a presetthreshold value. This configuration prevents short-circuit breakdown ofthe semiconductor element 2 a.

A distance between each linear portion 41 and each linear portion 42 ofthe main wiring 4 is preferably reduced to a minimum allowable valuedefined by production constraints so as to reduce synthetic inductancein the respective semiconductor elements 2 that form each element array.In the main wiring 4, a current flows in opposite directions at eachlinear portion 41 and each linear portion 42. As a result, a magneticfield generated by the current flowing through each linear portion 41cancels the magnetic field generated by the current flowing through eachlinear portion 42, to thereby increase the influence of mutualinductance and reduce resultant synthetic inductance. This configurationcan suppress a surge voltage during switching operations of thesemiconductor elements 2.

A coolant of the cooler 9 is caused to flow in a direction from thesemiconductor element 2 c that is largely influenced by syntheticinductance of the main wiring 4, to the semiconductor element 2 a thatis less influenced by the synthetic inductance. Specifically, thesemiconductor element 2 a to which the sensor 3 a is mounted, is locatedon the most downstream side of the flow of the coolant of the cooler 9which flows in the X direction. With this arrangement, the coolantincreases its temperature by receiving heat from the semiconductorelements 2 b and 2 c and consequently, shows the highest temperature ata position just below the semiconductor element 2 a.

The largest amount of current flows through the semiconductor element 2a to which the temperature sensor as the sensor 3 a is mounted, amongthe semiconductor element 2 a to 2 c that form the element array A. Inaddition, the coolant temperature in the cooler 9 is highest at theposition just below the semiconductor element 2 a. Therefore, it iseffective to mount the temperature sensor to the semiconductor element 2a so as to detect the temperature of the semiconductor element 2 a.

Further, when at least three or more element arrays are arranged, thetemperature of a semiconductor element 2 g of an element array otherthan element arrays at end portions, becomes high due to an influence ofthermal interference between the semiconductor elements. Therefore, inthis case, it is desirable that the temperature sensor be mounted on thesemiconductor element 2 g of the element array other than the elementarrays at the end portions, so as to detect the temperature of thesemiconductor element 2 g.

The temperature sensor mounted on the semiconductor element 2 a may beprovided, for example, in the form of a diode being mounted inside thesemiconductor element 2 a, in the form of a thermistor being mounted toa source of the semiconductor element 2 a, and in the form of athermistor being mounted onto the electrode 6 a at a position close tothe semiconductor element 2 a. Of those, the form of a diode beingmounted inside the semiconductor element 2 a is desirable inconsideration of the precision of temperature detection.

Here, when the semiconductor elements 2 have variance in threshold valueof a gate voltage at which a current flows into the respectivesemiconductor elements 2, and in conduction resistance value of thesemiconductor element 2, the semiconductor element 2 that has a smallerthreshold value and a smaller resistance value is placed at a portionhaving small synthetic inductance, of the main wiring 4. With thisarrangement, current deviation is increased.

In the related-art device, as described above, the wafer substrate madeof the wide bandgap semiconductor has a large number of defects. Hence,in order to increase production yield of the semiconductor elements 2and thus achieve cost reduction, the semiconductor elements in eachsemiconductor power module are required to be configured such that aplurality of semiconductor elements having a small element size areconnected in parallel.

However, when the temperature sensors, the current sensors, or othersuch sensors are mounted to all the plurality of semiconductor elementsconnected in parallel, such a plurality of sensors are required to beindividually connected to a plurality of control terminals via wires, tothereby be connected to the control board. This configuration leads toincreases in size of the semiconductor power module including thecontrol board, and in cost thereof.

In contrast, according to the first embodiment, the single sensor 3 a ismounted only to the semiconductor element 2 a close to the controlterminal 1 a and hence, the numbers of sensors and control terminals canbe reduced, with the result that the semiconductor power moduleincluding the control board can be downsized, and a cost thereof can besaved.

Further, the related-art device has a risk in that the syntheticinductance of the main wiring connected to the plurality ofsemiconductor elements connected in parallel, is increased and thesemiconductor elements are broken by resultant surge voltage.

In contrast, according to the first embodiment, the opposing linearportions 41 and linear portions 42 of the main wiring 4 form a two-layerstructure as viewed from the Y direction. Such a structure enables asignificant decrease in synthetic inductance of the main wiring 4 ascompared with a one-layer structure. Accordingly, during high-speedswitching operations of the switching elements made of the wide bandgapsemiconductor, a serge voltage can be reduced and therefore, highlyefficient inverter driving is achieved.

The control terminal 1 a is desirably placed as far as possible from themain wiring 4. This arrangement enables reduction in electric noise thatmay be generated at the control terminal 1 a due to the main wiring 4.

As described above, the semiconductor power module according to thefirst embodiment includes the electrode 6 a (first electrode) on whichthe plurality of element arrays including the plurality of semiconductorelements 2 arranged in the X direction, are arranged in the Y direction,the main wiring 4 (first main wiring) connected to the respectiveelement arrays mounted on the electrode 6 a, the sensor 3 a (firstsensor) mounted to the semiconductor element 2 a (first detection targetelement) out of the semiconductor elements of the plurality of elementarrays mounted on the electrode 6 a, which is least influenced by thesynthetic inductance of the main wiring 4, the control terminal 1 a(first control terminal) disposed on the electrode 6 a, and the controlboard configured to control a current to be supplied to thesemiconductor element 2 a based on a detection result of the sensor 3 aobtained via the control terminal 1 a.

With this configuration, the temperature of the semiconductor elementcan be detected with use of the single sensor and hence, a temperaturedetection error can be further reduced. Therefore, a margin of anallowable temperature of the semiconductor power module can be reducedand consequently, a high-output power conversion device can be achieved.

Further, it is not required to mount the sensor on all semiconductorelements of the semiconductor power module and hence, for example, anarea required to mount the sensor can be reduced, and a cost can beaccordingly saved. Moreover, it is only required to connect the singlesensor to the control board and hence, a space in which a connectionwiring is installed can be reduced, and the power conversion device canbe accordingly downsized. Further, with the configuration in which thetemperature sensor or the current sensor is mounted as the sensor to thesemiconductor element that receives the largest amount of current andsuffers from the largest thermal damage among the plurality ofsemiconductor elements that form the semiconductor power module, thesingle sensor suffices to protect the semiconductor elements from anexcessive temperature rise or overcurrent.

As apparent from the description above, the semiconductor power moduleaccording to the first embodiment contributes to realization of ahigh-output conversion device and the downsizing of the power conversiondevice.

Second Embodiment

Referring to FIG. 4 and FIG. 5, a description is given of asemiconductor power module according to a second embodiment of thepresent invention, which has a different configuration from that in thefirst embodiment. FIG. 4 is a top view of the semiconductor power moduleaccording to the second embodiment of the present invention. FIG. 5 is asectional view taken along the line II-II of FIG. 4. In the secondembodiment, the description is not given of similar configuration tothat in the first embodiment, and is mainly given of the differentconfiguration from the first embodiment.

The semiconductor power module of the second embodiment corresponds toeach of three different sets of the semiconductor power modules 301,303, and 305 on the upper arm side and the semiconductor power modules302, 304, and 306 on the lower arm side as illustrated in FIG. 14. Inother words, the inverter circuit of FIG. 14 can be achieved with use ofthree semiconductor power modules configured as illustrated in FIG. 4and FIG. 5.

The semiconductor power module of the second embodiment includes thecontrol terminal 1 a (first control terminal), a control terminal 1 b(second control terminal), the plurality of semiconductor elements 2,the sensor 3 a (first sensor), a sensor 3 b (second sensor), the mainwiring 10 (first main wiring), a main wiring 11 (second main wiring), amain wiring 12 (third main wiring), a main wiring 13, the electrode 6 a(first electrode), an electrode 6 b (second electrode), the insulatingsubstrate 7, two heat sinks 8, the cooler 9, and the control board (notshown).

On the electrode 6 a to be disposed on the insulating substrate 7, aplurality of element arrays are mounted, which include the plurality ofsemiconductor elements 2 arranged at regular pitches in the X direction.The element arrays are arranged at regular pitches in the Y direction.Likewise, on the electrode 6 b to be disposed on the insulatingsubstrate 7, a plurality of element arrays are mounted, which includethe plurality of semiconductor elements 2 arranged at regular pitches inthe X direction. The element arrays are arranged at regular pitches inthe Y direction. In this way, on the insulating substrate 7, theelectrode 6 a and the electrode 6 b are separately mounted, and theplurality of semiconductor elements 2 are mounted on both of theelectrode 6 a and the electrode 6 b.

The sensor 3 a is mounted on a corresponding one (first detection targetelement) of the semiconductor elements of the plurality of elementarrays mounted on the electrode 6 a, that is, the first detection targetelement is least influenced by the synthetic inductance of the mainwiring 10 among those elements. In the second embodiment, thesemiconductor element 2 to which the sensor 3 a is mounted is referredto as “semiconductor element 2 a”, the element array including thesemiconductor element 2 a is referred to as “element array A”, and othersemiconductor elements 2 of the element array A are referred to as“semiconductor element 2 b” and “semiconductor element 2 c”.

The sensor 3 b is mounted on a corresponding one (second detectiontarget element) of the semiconductor elements of the plurality ofelement arrays mounted on the electrode 6 b, that is, the firstdetection target element is least influenced by synthetic inductance ofthe main wiring 11 among those elements. In the second embodiment, thesemiconductor element 2 to which the sensor 3 b is mounted is referredto as “semiconductor element 2 f”, the element array including thesemiconductor element 2 f is referred to as “element array B”, and othersemiconductor elements 2 in the element array B are referred to as“semiconductor element 2 d” and “semiconductor element “2 e”.

The main wiring 10 is connected to the respective element arrays mountedon the electrode 6 a. More specifically, the main wiring 10 is bonded tosource pads of the semiconductor elements 2 of the respective elementarrays mounted on the electrode 6 a.

The main wiring 10 has linear portions 101 that extend in the Xdirection and are connected to the respective element arrays mounted onthe electrode 6 a. An end portion 102 of the main wiring 10 extends inthe Z direction and is connected to an electronic device (e.g., acapacitor). Considering the configuration of FIG. 14, for example, theend portion 102 of the main wiring 10 is connected to the N side.

The main wiring 11 is connected to the respective element arrays mountedon the electrode 6 b. More specifically, the main wiring 11 is bonded tosource pads of the semiconductor elements 2 of the respective elementarrays mounted on the electrode 6 b.

The main wiring 11 has linear portions 111 that extend in the Xdirection. An end portion 112 of the main wiring 11 extends in the Zdirection and is connected to the electrode 6 a.

The main wiring 12 has a recess 121 (first recess) formed oppositelyabove the semiconductor element 2 located at an outermost position inthe X direction among the semiconductor elements 2 of the respectiveelement arrays mounted on the electrode 6 a, a recess 122 (secondrecess) formed oppositely above the semiconductor element 2 located atan innermost position in the X direction among the semiconductorelements 2 of the respective element arrays mounted on the electrode 6b, and a linear portion 123 formed to connect one end of the recess 121and one end of the recess 122 and extend, in the X direction, oppositelyto a corresponding one of the linear portions 101 and a correspondingone of the linear portions 111. One end 124 of the main wiring 12extends in the Z direction and is connected to the electrode 6 b.Another end 125 of the main wiring 12 is connected to an electronicdevice. Considering the configuration of FIG. 14, for example, the endportion 125 of the main wiring 12 is connected to the P side.

A distance between the recess 121 and a corresponding one of the linearportions 101 is smaller than that between the linear portion 123 and acorresponding one of the linear portions 101. Further, a distancebetween the recess 122 and a corresponding one of the linear portions111 is smaller than that between the linear portion 123 and acorresponding one of the linear portions 111. The main wiring 13 isconnected to the electrode 6 a and extends in the Z direction.Considering the configuration of FIG. 14, for example, the end portionof the main wiring 13 is connected to the UVW side.

The control terminal 1 a is disposed on the electrode 6 a at an outerposition in the X direction than the plurality of element arrays mountedon the electrode 6 a, and extends in the Z direction. The controlterminal 1 b is disposed on the electrode 6 b at an inner position inthe X direction than the plurality of element arrays mounted on theelectrode 6 b, and extends in the Z direction.

The control board is connected to the sensor 3 a via the controlterminal 1 a, and configured to control a current flowing through thesemiconductor element 2 a to which the sensor 3 a is mounted, based on adetection result of the sensor 3 a obtained via the control terminal 1a. Further, the control board is connected to the sensor 3 b via thecontrol terminal 1 b, and configured to control a current flowingthrough the semiconductor element 2 f to which the sensor 3 b ismounted, based on a detection result of the sensor 3 b obtained via thecontrol terminal 1 b. Similarly to the first embodiment, the sensors 3 aand 3 b are temperature sensors or current sensors.

Next, synthetic inductance of the main wiring 10 and syntheticinductance of the main wiring 11 are described.

Regarding the synthetic inductance of the main wiring 10 that influencesthe semiconductor element 2 a, the influence of mutual inductance islarge at a position corresponding to the semiconductor element 2 abecause the main wiring 10 and the main wiring 12 formed just above themain wiring 10 are close to each other at that position. Therefore, thesemiconductor element 2 a is less susceptible to the syntheticinductance of the main wiring 10 than other semiconductor elements 2mounted on the electrode 6 a.

Similarly, regarding the synthetic inductance of the main wiring 11 thatinfluences the semiconductor element 2 f, the influence of mutualinductance is large at a position corresponding to the semiconductorelement 2 f because the main wiring 11 and the main wiring 12 formedjust above the main wiring 11 are close to each other at that position.Therefore, the semiconductor element 2 f is less susceptible to thesynthetic inductance of the main wiring 11 than other semiconductorelements 2 mounted on the electrode 6 b.

Accordingly, the semiconductor element 2 a is least influenced by thesynthetic inductance of the main wiring 10 among the semiconductorelements 2 mounted on the electrode 6 a and hence, the largest amount ofcurrent flows therethrough. Likewise, the semiconductor element 2 f isleast influenced by the synthetic inductance of the main wiring 11 amongthe semiconductor elements 2 mounted on the electrode 6 b and hence, thelargest amount of current flows therethrough.

Hence, in the second embodiment, temperature sensors or the currentsensors are mounted as the sensors 3 a and 3 b to the semiconductorelements 2 a and 2 f, respectively, and configured to cut off or reducea current to be supplied to the semiconductor elements 2 a and 2 fbefore a detection value of each sensor exceeds a preset thresholdvalue.

The current sensor is desirably mounted on both the semiconductorelements 2 a and 2 f that receive the largest amount of current asdescribed above. Further, the temperature sensor is desirably mounted onthe semiconductor element 2 f disposed on the most downstream side ofthe flow of the coolant in the cooler 9, which flows in the X direction.

As described above, in contrast to the configuration of the firstembodiment, the semiconductor module according to the second embodimentfurther includes the electrode 6 b (second electrode) on which theplurality of element arrays including the plurality of semiconductorelements 2 arranged in the X direction, are arranged in the Y direction,the main wiring 11 (second main wiring) connected to the respectiveelement arrays mounted on the electrode 6 b, the sensor 3 b (secondsensor) mounted to the semiconductor element 2 f (second detectiontarget element) out of the semiconductor elements of the plurality ofelement arrays mounted on the electrode 6 b, which is least influencedby the inductance of the main wiring 11, and the control terminal 1 b(second control terminal) disposed on the electrode 6 b.

Further, in the above-mentioned configuration, the control board isconfigured to further control a current flowing through thesemiconductor element 2 f based on the detection result of the sensor 3b obtained via the control terminal 1 b. This configuration can producethe same effects as those of the first embodiment as well.

Third Embodiment

Referring to FIG. 6 and FIG. 7, a description is given of asemiconductor power module according to a third embodiment of thepresent invention, which has a different configuration from that in thesecond embodiment. FIG. 6 is a top view of the semiconductor powermodule according to the third embodiment of the present invention. FIG.7 is a sectional view taken along the line of FIG. 6. In the thirdembodiment, the description is not given of similar configuration tothat in the first embodiment and the second embodiment, and is mainlygiven of the different configuration from the first embodiment and thesecond embodiment.

The semiconductor power module of the third embodiment includes thecontrol terminal 1 a (first control terminal), the control terminal 1 b(second control terminal), the plurality of semiconductor elements 2,the sensor 3 a (first sensor), the sensor 3 b (second sensor), the mainwiring 14 (first main wiring), the main wiring 15 (second main wiring),a main wiring 16, a main wiring 17, the electrode 6 a (first electrode),the electrode 6 b (second electrode), the insulating substrate 7, thetwo heat sinks, the cooler 9 (not shown), and the control board (notshown).

Similarly to the second embodiment, on the insulating substrate 7, theelectrode 6 a and the electrode 6 b are separately mounted, and theplurality of semiconductor elements 2 are mounted on both of theelectrode 6 a and the electrode 6 b.

The main wiring 14 is connected to the respective element arrays mountedon the electrode 6 a. More specifically, the main wiring 14 is bonded tosource pads of the semiconductor elements 2 of the respective elementarrays mounted on the electrode 6 a.

The main wiring 14 has linear portions 141 that extend in the Xdirection and are connected to the respective element arrays mounted onthe electrode 6 a. An end portion 142 of the main wiring 14 extends inthe Z direction and is connected to the electrode 6 b.

The main wiring 15 is connected to the respective element arrays mountedon the electrode 6 b. More specifically, the main wiring 15 is bonded tosource pads of the semiconductor elements 2 of the respective elementarrays mounted on the electrode 6 b.

The main wiring 15 has linear portions 151 (first linear portions) thatare connected to the respective element arrays mounted on the electrode6 b, and extend in the X direction, linear portions 152 (second linearportions) extending, in the X direction, oppositely to the linearportions 151 and the linear portions 141, connection portions 153 formedto connect one ends of the respective linear portions 151 and one endsof the respective linear portions 152, and a recess 154 connected toanother end of a corresponding one of the linear portions 152 and formedoppositely above the semiconductor element 2 located at the outermostposition in the X direction among the semiconductor elements of therespective element arrays mounted on the electrode 6 a. An end portion155 of the main wiring 15 is connected to an electronic device.Considering the configuration of FIG. 14, for example, the end portion155 of the main wiring 15 is connected to the N side.

A distance between the recess 154 and a corresponding one of the linearportions 141 is smaller than that between a corresponding one of thelinear portions 152 and a corresponding one of the linear portions 141.

The main wiring 16 is connected to the electrode 6 a, and extends in theZ direction, and the main wiring 17 is connected to the electrode 6 b,and extends in the Z direction. An end portion of the main wiring 16 isconnected to an electronic device. Considering the configuration of FIG.14, for example, the end portion of the main wiring 17 is connected tothe UVW side, and the end portion of the main wiring 16 is connected tothe P side.

Next, synthetic inductance of the main wiring 14 and syntheticinductance of the main wiring 15 are described.

The wiring length from the end portion 155 of the main wiring 15 to thesemiconductor element 2 f is shortest of the plurality of semiconductorelements 2 mounted on the electrode 6 b and hence, the self inductanceof the main wiring 15 is small at the semiconductor element 2 f.Accordingly, the semiconductor element 2 f receives the largest amountof current and suffers from the largest conduction loss among theplurality of semiconductor elements 2 mounted on the electrode 6 b.

Meanwhile, the main wiring 14 and the main wiring 15 formed just abovethe main wiring 14 are close to each other at the semiconductor element2 a among the plurality of semiconductor elements 2 mounted on theelectrode 6 a. Therefore, the synthetic inductance of the main wiring 14is small at the semiconductor element 2 a compared with othersemiconductor elements 2 mounted on the electrode 6 a. Accordingly, thesemiconductor element 2 a receives the largest amount of current andsuffers from the largest conduction loss among the plurality ofsemiconductor elements 2 mounted on the electrode 6 a.

Hence, in the third embodiment, temperature sensors or the currentsensors are mounted as the sensors 3 a and 3 b to the semiconductorelements 2 a and 2 f, respectively, and configured to cut off or reducea current to be supplied to the semiconductor elements 2 a and 2 fbefore a detection value of each sensor exceeds a preset thresholdvalue.

As described above, in the semiconductor module of the third embodiment,the main wiring 14 and the main wiring 15 are configured in a differentway from the configuration of the second embodiment. That is, the mainwiring 14 (first main wiring) is configured to have the linear portions141 that are connected to the respective element arrays mounted on theelectrode 6 a (first electrode), and extend in the X direction. The mainwiring 15 (second main wiring) is configured to have the linear portions151 (first linear portions) that are connected to the respective elementarrays mounted to the electrode 6 b (second electrode), and extend inthe X direction, the linear portions 152 (second linear portions)extending, in the X direction, oppositely to the linear portions 151 andthe linear portions 141, the connection portions 153 formed to connectone ends of the respective linear portions 151 and one ends of therespective linear portions 152, and the recess 154 connected to anotherend of a corresponding one of the linear portions 152, and formedoppositely above the semiconductor element 2 a (first detection targetelement) mounted on the electrode 6 a. This configuration can producethe same effects as those of the first embodiment as well.

Fourth Embodiment

Referring to FIG. 8 and FIG. 9, a description is given of asemiconductor power module according to a fourth embodiment of thepresent invention, which has a different configuration from that in thefirst embodiment and the second embodiment. FIG. 8 is a top view of thesemiconductor power module according to the fourth embodiment of thepresent invention. FIG. 9 is a sectional view taken along the line IV-IVof FIG. 8. In the fourth embodiment, the description is not given ofsimilar configuration to that in the first embodiment to thirdembodiment, and is mainly given of the different configuration from thefirst embodiment to third embodiment.

The semiconductor power module of the fourth embodiment includes thecontrol terminal 1 a (first control terminal), the control terminal 1 b(second control terminal), the plurality of semiconductor elements 2,the sensor 3 a (first sensor), the sensor 3 b (second sensor), the mainwiring 18 (first main wiring), a main wiring 19 (second main wiring), amain wiring 20, a main wiring 21, the electrode 6 a (first electrode),the electrode 6 b (second electrode), the insulating substrate 7, thetwo heat sinks 8, the cooler 9 (not shown), and the control board (notshown).

Similarly to the second embodiment, on the insulating substrate 7, theelectrode 6 a and the electrode 6 b are separately mounted, and theplurality of semiconductor elements 2 are mounted on both of theelectrode 6 a and the electrode 6 b.

The main wiring 18 is connected to the respective element arrays mountedon the electrode 6 a. More specifically, the main wiring 18 is bonded tosource pads of the semiconductor elements 2 of the respective elementarrays mounted on the electrode 6 a.

The main wiring 18 has linear portions 181 (first linear portions) thatare connected to the respective element arrays mounted on the electrode6 a, and extend in the X direction, linear portions 182 (second linearportions) extending, in the X direction, oppositely to the linearportions 181, and connection portions 183 formed to connect one ends ofthe respective linear portions 181 and one ends of the respective linearportions 182. An end portion 184 of the main wiring 18 is connected toan electronic device. Considering the configuration of FIG. 14, forexample, the end portion 184 of the main wiring 18 is connected to the Nside.

The main wiring 19 is connected to the respective element arrays mountedon the electrode 6 b. More specifically, the main wiring 19 is bonded tosource pads of the semiconductor elements 2 of the respective elementarrays mounted on the electrode 6 b.

The main wiring 19 has linear portions 191 (first linear portions) thatare connected to the respective element arrays mounted on the electrode6 b, and extend in the X direction, linear portions 192 (second linearportions) extending, in the X direction, oppositely to the linearportions 191, connection portions 193 formed to connect one ends of therespective linear portions 191 and one ends of the respective linearportions 192. An end portion 194 of the main wiring 19 extends in the Zdirection, and is connected to the electrode 6 a.

The main wiring 20 is connected to the electrode 6 a, and extends in theZ direction, and an end portion thereof is connected to an electronicdevice. The main wiring 21 is connected to the electrode 6 b, andextends in the Z direction, and an end portion thereof is connected toan electronic device. Considering the configuration of FIG. 14, forexample, the end portion of the main wiring 20 is connected to the UVWside, and the end portion of the main wiring 21 is connected to the Pside.

As described above, in the semiconductor module of the fourthembodiment, the main wiring 18 and the main wiring 19 are formed in adifferent way from the configuration of the second embodiment. That is,the main wiring 18 (first main wiring) is configured to have the linearportions 181 (first linear portions) that are connected to therespective element arrays mounted on the electrode 6 a (firstelectrode), and extend in the X direction, the linear portions 182(second linear portions) extending, in the X direction, oppositely tothe linear portions 181, and the connection portions 183 formed toconnect one ends of the respective linear portions 181 and one ends ofthe respective linear portions 182. The main wiring 19 (second mainwiring) is configured to have the linear portions 191 (first linearportions) that are connected to the respective element arrays mounted tothe electrode 6 b (second electrode), and extend in the X direction, thelinear portions 192 (second linear portions) extending, in the Xdirection, oppositely to the linear portions 191, and the connectionportions 193 formed to connect one ends of the respective linearportions 191 and one ends of the respective linear portions 192. Thisconfiguration can produce the same effects as those of the firstembodiment as well.

Fifth Embodiment

Referring to FIG. 10 and FIG. 11, a description is given of asemiconductor power module according to a fifth embodiment of thepresent invention, which has a different configuration from that in thesecond embodiment to fourth embodiment. FIG. 10 is a top view of thesemiconductor power module according to the fifth embodiment of thepresent invention. FIG. 11 is a sectional view taken along the line V-Vof FIG. 10. In the fifth embodiment, the description is not given ofsimilar configuration to that in the first embodiment to fourthembodiment, and is mainly given of the different configuration from thefirst embodiment to fourth embodiment.

The semiconductor power module of the fifth embodiment includes thecontrol terminal 1 a (first control terminal), the control terminal 1 b(second control terminal), the plurality of semiconductor elements 2,the sensor 3 a (first sensor), the sensor 3 b (second sensor), the mainwiring 22 (first main wiring), a main wiring 23 (second main wiring), amain wiring 24, a main wiring 25, the electrode 6 a (first electrode),the electrode 6 b (second electrode), the insulating substrate 7, thetwo heat sinks 8, the cooler 9 (not shown), and the control board (notshown).

Similarly to the second embodiment, on the insulating substrate 7, theelectrode 6 a and the electrode 6 b are separately mounted, and theplurality of semiconductor elements 2 are mounted on both of theelectrode 6 a and the electrode 6 b.

The main wiring 22 is connected to the respective element arrays mountedon the electrode 6 a. More specifically, the main wiring 22 is bonded tosource pads of the semiconductor elements 2 of the respective elementarrays mounted on the electrode 6 a.

The main wiring 22 has linear portions 221 (first linear portions) thatare connected to the respective element arrays mounted on the electrode6 a, and extend in the X direction, linear portions 222 (second linearportions) extending, in the X direction, oppositely to linear portions231 described later and the linear portions 221, and connection portions223 formed to connect one ends of the respective linear portions 221 andone ends of the respective linear portions 222. An end portion 224 ofthe main wiring 22 extends in the Z direction, and is connected to theelectrode 6 b.

The main wiring 23 is connected to the respective element arrays mountedon the electrode 6 b. More specifically, the main wiring 23 is bonded tosource pads of the semiconductor elements 2 of the respective elementarrays mounted on the electrode 6 b.

The main wiring 23 has the linear portions 231 that are connected to therespective element arrays mounted on the electrode 6 b, and extend inthe X direction. An end portion 232 of the main wiring 23 extends in theZ direction, and is connected to a first electronic device. Consideringthe configuration of FIG. 14, for example, the end portion 232 of themain wiring 23 is connected to the N side.

The main wiring 24 is connected to the electrode 6 a, and extends in theZ direction, and an end portion thereof is connected to a firstelectronic device. The main wiring 25 is connected to the electrode 6 b,and extends in the Z direction, and the end portion thereof is connectedto a second electronic device. Considering the configuration of FIG. 14,for example, the end portion of the main wiring 25 is connected to theUVW side, and the end portion of the main wiring 24 is connected to theP side.

As described above, in the semiconductor power module of the fifthembodiment, the main wiring 22 and the main wiring 23 are formed in adifferent way from the configuration of the second embodiment. That is,the main wiring 23 (second main wiring) is configured to have the linearportions 231 that are connected to the respective element arrays mountedon the electrode 6 b (second electrode), and extend in the X direction.The main wiring 22 (first main wiring) is configured to have the linearportions 221 (first linear portions) that are connected to therespective element arrays mounted to the electrode 6 a (firstelectrode), and extend in the X direction, the linear portions 222(second linear portions) extending, in the X direction, oppositely tothe linear portions 231 and the linear portions 221, and the connectionportions 223 formed to connect one ends of the respective linearportions 221 and one ends of the respective linear portions 222. Thisconfiguration can produce the same effects as those of the firstembodiment as well.

Sixth Embodiment

Referring to FIG. 12 and FIG. 13, a description is given of asemiconductor power module according to a sixth embodiment of thepresent invention, which has a different configuration from that in thesecond embodiment to fifth embodiment. FIG. 12 is a bottom view of thesemiconductor power module according to the sixth embodiment of thepresent invention. FIG. 13 is a sectional view taken along the lineVI-VI of FIG. 12. In the sixth embodiment, the description is not givenof similar configuration to that in the first embodiment to fifthembodiment, and is mainly given of the different configuration from thefirst embodiment to fifth embodiment.

The semiconductor power module of the sixth embodiment includes thecontrol terminal 1 a (first control terminal), the control terminal 1 b(second control terminal), the plurality of semiconductor elements 2,the sensor 3 a (first sensor), the sensor 3 b (second sensor), the mainwiring 26 (first main wiring), a main wiring 27 (second main wiring), amain wiring 28, a main wiring 29, the electrode 6 a (first electrode),the electrode 6 b (second electrode), the two insulating substrates 7,the two heat sinks 8, the cooler 9 (not shown), and the control board(not shown).

On an upper face of the cooler 9, the electrode 6 a on which theplurality of semiconductor elements 2 is mounted, the insulatingsubstrate 7 on which the electrode 6 a is mounted, and the heat sink 8on which the insulating substrate 7 is placed are arranged. On a lowerface of the cooler 9, the electrode 6 b on which the plurality ofsemiconductor elements 2 are mounted, the insulating substrate 7 onwhich the electrode 6 b is mounted, and the heat sink 8 on which theinsulating substrate 7 is placed are arranged. In this way, theelectrode 6 a is disposed on the upper face side of the cooler 9, andthe electrode 6 b is disposed on the lower face side of the cooler 9.

The main wiring 26 is connected to the respective element arrays mountedon the electrode 6 a. The main wiring 26 has linear portions 261 (firstlinear portions) that are connected to the respective element arraysmounted on the electrode 6 a, and extend in the X direction, linearportions 262 (second linear portions) extending, in the X direction,oppositely to the linear portions 261, and connection portions 263formed to connect one ends of the respective linear portions 261 and oneends of the respective linear portions 262. Another ends of therespective linear portions 262 of the main wiring 26 are connected tothe first electronic device. Considering the configuration of FIG. 14,for example, the another ends of the respective linear portions 262 ofthe main wiring 26 are connected to the N side.

The main wiring 27 is connected to the respective element arrays mountedon the electrode 6 b. The main wiring 27 has linear portions 271 (firstlinear portions) that are connected to the respective element arraysmounted on the electrode 6 b, and extend in the X direction, linearportions 272 (second linear portions) extending, in the X direction,oppositely to the linear portions 271, and connection portions 273formed to connect one ends of the respective linear portions 271 and oneends of the respective linear portions 272. Another ends of therespective linear portions 272 of the main wiring 27 are connected tothe electrode 6 a.

The main wiring 28 is connected to the electrode 6 a, and extends in theX direction, and an end portion thereof is connected to a secondelectronic device. The main wiring 29 is connected to the electrode 6 b,and extends in the X direction, and an end portion thereof is connectedto a first electronic device. Considering the configuration of FIG. 14,for example, the end portion of the main wiring 28 is connected to theUVW side, and the end portion of the main wiring 29 is connected to theP side.

As described above, in the semiconductor power module of the sixthembodiment, the electrode 6 a (first electrode) is disposed on the upperface side of the cooler 9, and the electrode 6 b (second electrode) isdisposed on the lower face side of the cooler 9, in contrast to theconfiguration of the second embodiment. The main wiring 26 (first mainwiring) is configured to have the linear portions 261 (first linearportions) that are connected to the respective element arrays mounted onthe electrode 6 a, and extend in the X direction, the linear portions262 (second linear portions) extending, in the X direction, oppositelyto the linear portions 261, and the connection portions 263 formed toconnect one ends of the respective linear portions 261 and one ends ofthe respective linear portions 262. The main wiring 27 (second mainwiring) is configured to have the linear portions 271 (first linearportions) that are connected to the respective element arrays mounted tothe electrode 6 b, and extend in the X direction, the linear portions272 (second linear portions) extending, in the X direction, oppositelyto the linear portions 271, and the connection portions 273 formed toconnect one ends of the respective linear portions 271 and one ends ofthe respective linear portions 272. This configuration can produce thesame effects as those of the first embodiment as well.

REFERENCE SIGNS LIST

1 a, 1 b control terminal, 2 semiconductor element, 3 a, 3 b sensor, 4main wiring, 41, 42 linear portion, 43, 44 connection portion, 45 endportion, 5 main wiring, 6 a, 6 b electrode, 7 insulating substrate, 8heat sink, 9 cooler, 10 main wiring, 101 linear portion, 102 endportion, 11 main wiring, 111 linear portion, 112 end portion, 12 mainwiring, 121, 122 recess, 123 linear portion, 124, 125 end portion, 13main wiring, 14 main wiring, 141 linear portion, 142 end portion, 15main wiring, 151, 152 linear portion, 153 connection portion, 154recess, 155 end portion, 16, 17 main wiring, 18 main wiring, 181, 182linear portion, 183 connection portion, 184 end portion, 19 main wiring,191, 192 linear portion, 193 connection portion, 194 end portion, 20, 21main wiring, 22 main wiring, 221, 222 linear portion, 223 connectionportion, 224 end portion, 23 main wiring, 231 linear portion, 232 endportion, 24, 25 main wiring, 26 main wiring, 261, 262 linear portion,263 connection portion, 27 main wiring, 271, 272 linear portion, 273connection portion, 28, 29 main wiring

The invention claimed is:
 1. A semiconductor power module comprising: afirst electrode, on which a plurality of element arrays each including aplurality of semiconductor elements arranged in an X direction arearranged in a Y direction perpendicular to the X direction; a first mainwiring connected to the respective element arrays mounted on the firstelectrode; a first sensor mounted on a first detection target element,said first detection target element being that one of the semiconductorelements; which is least influenced by synthetic inductance of the firstmain wiring, among the semiconductor elements of the plurality ofelement arrays mounted on the first electrode; a first control terminaldisposed on the first electrode; and a control board, which is connectedto the first sensor via the first control terminal, and is configured tocontrol a current flowing through the first detection target elementbased on a detection result of the first sensor obtained via the firstcontrol terminal.
 2. The semiconductor power module according to claim1, further comprising a cooler configured to cool the plurality ofsemiconductor elements, wherein the first detection target element isdisposed on a most downstream side of flow of a coolant in the cooler,which flows in the X direction.
 3. The semiconductor power moduleaccording to claim 1, wherein the first main wiring has: first linearportions, which are connected to the respective element arrays mountedon the first electrode, and are extended in the X direction; secondlinear portions, which are extended in the X direction and are opposedto the first linear portions; and connection portions configured toconnect one ends of the respective first linear portions and one ends ofthe respective second linear portions, and wherein the first detectiontarget element is the semiconductor element at which a wiring length ofthe first main wiring to an end portion thereof is shortest among thesemiconductor elements of the plurality of element arrays.
 4. Thesemiconductor power module according to claim 1, wherein the pluralityof element arrays comprise three or more element arrays, and wherein atemperature sensor is mounted on the respective semiconductor elementsof the element arrays except the element arrays located at end portions.5. The semiconductor power module according to claim 1, furthercomprising: a second electrode, on which a plurality of element arrayseach including a plurality of semiconductor elements arranged in the Xdirection are arranged in the Y direction; a second main wiringconnected to the respective element arrays mounted on the secondelectrode; a second sensor mounted on a second detection target element,said second detection target element being that one of the semiconductorelements, which is least influenced by synthetic inductance of thesecond main wiring, among the semiconductor elements of the plurality ofelement arrays mounted on the second electrode; and a second controlterminal disposed on the second electrode, wherein the control board isconnected to the second sensor via the second control terminal, and isconfigured to control a current flowing through the second detectiontarget element based on a detection result of the second sensor obtainedvia the second control terminal.
 6. The semiconductor power moduleaccording to claim 5, further comprising a third main wiring disposedoppositely above the first main wiring and the second main wiring,wherein an end portion of the third main wiring is connected to thesecond electrode, wherein an end portion of the second main wiring isconnected to the first electrode, wherein the first main wiring haslinear portions, which are connected to the respective element arraysmounted on the first electrode, and are extended in the X direction,wherein the second main wiring has linear portions, which are connectedto the respective element arrays mounted on the second electrode, andare extended in the X direction, wherein the third main wiring includes:a first recess formed oppositely above the first detection targetelement mounted on the first electrode; a second recess formedoppositely above the second detection target element mounted on thesecond electrode; and a linear portion, which is configured to connectone end of the first recess and one end of the second recess, and isextended in the X direction oppositely to a corresponding one of thelinear portions of the first main wiring and a corresponding one of thelinear portions of the second main wiring, wherein a distance betweenthe first recess of the third main wiring and the corresponding one ofthe linear portions of the first main wiring is smaller than a distancebetween the linear portion of the third main wiring and thecorresponding one of the linear portions of the first main wiring, andwherein a distance between the second recess of the third main wiringand the corresponding one of the linear portions of the second mainwiring is smaller than a distance between the linear portion of thethird main wiring and the corresponding one of the linear portions ofthe second main wiring.
 7. The semiconductor power module according toclaim 5, wherein an end portion of the first main wiring is connected tothe second electrode, wherein the first main wiring has linear portions,which are connected to the respective element arrays mounted on thefirst electrode, and are extended in the X direction, wherein the secondmain wiring includes: first linear portions, which are connected to therespective element arrays mounted on the second electrode, and areextended in the X direction; second linear portions, which are extendedin the X direction oppositely to the first linear portions and thelinear portions of the first main wiring; connection portions configuredto connect one ends of the respective first linear portions and one endsof the respective second linear portions; and a recess, which isconnected to another end of a corresponding one of the second linearportions, and is disposed oppositely above the first detection targetelement mounted on the first electrode, and wherein a distance betweenthe recess of the second main wiring and a corresponding one of thelinear portions of the first main wiring is smaller than a distancebetween the corresponding one of the second linear portions of thesecond main wiring and the corresponding one of the linear portions ofthe first main wiring.
 8. The semiconductor power module according toclaim 5, wherein an end portion of the second main wiring is connectedto the first electrode, wherein the first main wiring includes: firstlinear portions, which are connected to the respective element arraysmounted on the first electrode, and are extended in the X direction;second linear portions, which are extended in the X direction oppositelyto the first linear portions; and connection portions configured toconnect one ends of the respective first linear portions and one ends ofthe respective second linear portions, and wherein the second mainwiring includes: first linear portions, which are connected to therespective element arrays mounted on the second electrode, and areextended in the X direction; second linear portions which are extendedin the X direction oppositely to the first linear portions; andconnection portions configured to connect one ends of the respectivefirst linear portions and one ends of the respective second linearportions.
 9. The semiconductor power module according to claim 5,wherein an end portion of the first main wiring is connected to thesecond electrode, wherein the second main wiring has linear portions,which are connected to the respective element arrays mounted on thesecond electrode, and are extended in the X direction, wherein the firstmain wiring has: first linear portions, which are connected to therespective element arrays mounted on the first electrode, and areextended in the X direction; second linear portions, which are extendedin the X direction oppositely to the linear portions of the second mainwiring and the first linear portions; and connection portions configuredto connect one ends of the respective first linear portions and one endsof the respective second linear portions.
 10. The semiconductor powermodule according to claim 5, further comprising a cooler configured tocool the plurality of semiconductor elements, wherein the firstelectrode is disposed on an upper face side of the cooler, wherein thesecond electrode is disposed on a lower face side of the cooler, whereinan end portion of the second main wiring is connected to the firstelectrode, wherein the first main wiring includes: first linearportions, which are connected to the respective element arrays mountedon the first electrode, and are extended in the X direction; secondlinear portions, which are extended in the X direction oppositely to thefirst linear portions; and connection portions configured to connect oneends of the respective first linear portions and one ends of therespective second linear portions, and wherein the second main wiringincludes: first linear portions, which are connected to the respectiveelement arrays mounted on the second electrode, and are extended in theX direction; second linear portions, which are extended in the Xdirection oppositely to the first linear portions; and connectionportions configured to connect one ends of the respective first linearportions and one ends of the respective second linear portions.
 11. Thesemiconductor power module according to claim 1, wherein the sensorcomprises a temperature sensor or a current sensor.
 12. Thesemiconductor power module according to claim 1, wherein each of thesemiconductor elements is made of a wide bandgap semiconductor.